| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device reduced in increase of leak current due to abnormal growth of silicide. Ž<P>SOLUTION: In this semiconductor device, a first sidewall 23A and a second sidewall 24A are formed on a side surface of a gate electrode 22A. A first high-concentration impurity region 31A is formed beside the gate electrode 22A in a semiconductor substrate 10. At a position located on the outer side of the first high-concentration impurity region 31A and deeper than the first high-concentration impurity region, a second high-concentration impurity region 32A is formed. At a position located on the outer side of the second sidewall 23A and deeper than the second high-concentration impurity region 32A, a low-concentration impurity region 33A having impurity concentration lower than that of the first high-concentration impurity region 31A and the second high-concentration impurity region 32A is formed. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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