发明名称 |
COBALT NITRIDE LAYERS FOR COPPER INTERCONNECTS AND METHODS FOR FORMING THEM |
摘要 |
An interconnect structure for integrated circuits incorporates a layer of cobalt nitride that facilitates the nucleation, growth and adhesion of copper wires. The cobalt nitride may deposited on a refractory metal nitride or carbide layer, such as tungsten nitride or tantalum nitride, that serves as a diffusion barrier for copper and also increases the adhesion between the cobalt nitride and the underlying insulator. The cobalt nitride may be formed by chemical vapor deposition from a novel cobalt amidinate precursor. Copper layers deposited on the cobalt nitride show high electrical conductivity and can serve as seed layers for electrochemical deposition of copper conductors for microelectronics. |
申请公布号 |
KR20100016311(A) |
申请公布日期 |
2010.02.12 |
申请号 |
KR20097023256 |
申请日期 |
2008.04.09 |
申请人 |
PRESIDENT AND FELLOWS OF HARVARD COLLEGE |
发明人 |
GORDON ROY GERALD;BHANDARI HARISH;KIM HOON |
分类号 |
C23C16/34;C23C16/18;H01L21/28 |
主分类号 |
C23C16/34 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|