| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for driving a photodetector having a large S/N ratio, in which an amount of light can be measured with high sensitivity and accuracy, and further good reproduciblility and stability are secured, even in a semiconductor having good absorption efficiency and made of zinc oxide (ZnO) or the like, that is, a wide-band gap semiconductor detecting only ultraviolet light with no filter, and on which both of a p-type and n-type are less likely to be formed. <P>SOLUTION: The driving method impresses a predetermined forward voltage to a photodiode for a predetermined time and then impresses a short-circuit photoelectric current of a photodiode or a minute backward voltage, which is almost regarded as a short-circuit photoelectric current by receiving light such as ultraviolet light to measure a photocurrent, thus measuring an amount of light such as ultraviolet or the like from the short-circuit photocurrents, wherein a photodetector having a forward impression driving circuit and a short-circuit current detection circuit is used to measure a short-circuit current by receiving light such as ultraviolet light. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
