| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of stabilizing main breakdown voltage characteristics. <P>SOLUTION: A p-base layer 3, an n-source layer 4, a gate electrode 11 and an emitter electrode 14a which serves as an IGBT are formed in a first region R1 on a first principal plane of an n-type semiconductor substrate 1, and a collector electrode 15 is formed on a second principal plane. A p-layer 5 serving as a guard ring is formed from a surface to a predetermined depth, in a second region R2 serving as a peripheral joint region. An AlSi layer 14c and a semi-insulating silicon nitride film 17 are formed in the second region R2, and further, an overcoat film 18 is formed. An n-layer 6 is formed on the surface of a third region R3, and further, the AlSi layer 14c serving as a step 20 is formed at a distance from an AlSi layer 14b located at the outermost periphery. <P>COPYRIGHT: (C)2010,JPO&INPIT |
