| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device of STI structure in which degradation of operating characteristics does not occur even if the device becomes minute, and to provide a method of manufacturing the same. SOLUTION: The gate electrode part of an NMOS transistor is constituted of an NMOS work function control metal layer 7 and a gate main electrode 5. The NMOS work function control metal layer 7 is formed by the sputtering method, and the film thickness in the region b which is a region in the vicinity of the edge in which a divot part 2d is provided is formed more thinly than the film thickness in the region a which is another region. Accordingly, with regard to the NMOS work function control metal layer 7, the effective work function in the region b is set up near to a mid gap, in comparison with the effective work function in the region a. COPYRIGHT: (C)2010,JPO&INPIT
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