SPIN TRANSISTOR, RECONFIGURABLE LOGIC CIRCUIT, MAGNETO-RESISTANCE EFFECT ELEMENT, AND MAGNETIC MEMORY

摘要

PROBLEM TO BE SOLVED: To obtain a magneto-resistance variation rate which is as high as possible and influenced as little as possible by temperature variation even when a full-Heusler alloy is used for a magnetic layer. Ž

SOLUTION: A spin transistor has: a source portion 15a and a drain portion 15b which are provided on a semiconductor substrate apart from each other, the source portion and drain portion respectively including ferromagnetic multilayer films having first ferromagnetic layers 15a1and 15b1made of an alloy containing Co and Fe, and second ferromagnetic layers 15a2and 15b2formed on the first ferromagnetic layers and made of the full-Heusler alloy containing Co and Mn; a gate insulating film 9 provided on the semiconductor substrate between the source portion and drain portion; and a gate electrode 10 provided on the gate insulating film. Ž

COPYRIGHT: (C)2010,JPO&INPIT Ž