| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce stripes caused by ion implantation into a semiconductor wafer. Ž<P>SOLUTION: An ion implanting method is carried out to cause a heating means to heat a plurality of semiconductor wafers arranged concentrically around the rotating shaft of a rotor to be rotated by a rotation drive mechanism and to cause an ion implanting means to implant ions into the heated wafers. Conventionally, (a) whether a reference temperature of the wafers has reached a preset temperature is determined (S12), and when the reference temperature has reached the preset temperature (Yes at S12), ion implantation is started (S13). According to the ion implanting method (b), whether a reference temperature of the wafers has reached a preset temperature is determined (S22), and then whether a given time (preset time) for removing a temperature irregularity on the ion implantation surfaces of the wafers has elapsed is determined (S23) when the reference temperature has reached the preset temperature (Yes at S22). When the given time has elapsed (Yes at S23), ion implantation is started (S24). Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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