NONVOLATILE SEMICONDUCTOR MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device which is reduced in occupation area.

SOLUTION: The nonvolatile semiconductor memory device includes: a memory cell array layer 400 having electrically rewritable memory cells MC connected in series; a control circuit layer 200 disposed below the memory cell array layer 400 and controlling a voltage applied to the memory cells MC; and an interconnection portion 500 electrically connecting the control circuit layer 200 and the memory cell array layer 400. The memory cell array layer 400 includes: first memory cell regions 40A having the memory cells; and connection regions 40C provided with the interconnection portion 500. The first memory cell regions 40A are provided repeatedly at a first pitch in a row direction. The connection regions 40C are provided intermittently between the first memory cell regions 40A mutually adjacent in the row direction, and at a second pitch in a column direction.

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