| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device capable of easily manufacturing a highly reliable semiconductor element, and to provide the semiconductor element. SOLUTION: Gate electrodes 2a, 2b are formed, source electrodes 5a, 5c and drain electrodes 5b, 5d are formed, semiconductor films 6a, 6b are formed using organic semiconductor materials, and protective films 7a, 7b are formed on surfaces of the semiconductor films 6a, 6b, respectively. The protective films 7a, 7b are formed by applying coating liquids containing protective materials and fluorine-based solvents on the surfaces of the semiconductor films 6a, 6b, respectively. COPYRIGHT: (C)2010,JPO&INPIT
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