| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device, along with its manufacturing method, which can be reduced in size and off breakdown voltage is maintained, while lowering the on-resistance. Ž<P>SOLUTION: In the region of semiconductor substrate 1, a source electrode 7 and an LDD region 5b are formed on one side, while a drain electrode 6 and an LDD layer 5a are formed on the other side, with a gate electrode 4 therebetween. In the LDD layer 5a, formed from the surface of the semiconductor substrate 1 down to a predetermined depth D1, a p-type diffusion layer 10 is so formed as to be surrounded by the LDD layer 5a, excluding the surface of the LDD layer 5a, while being extended from the surface of the LDD layer 5a to a depth D3. In the LDD layer 5a, a protruding part 55 is formed, in a region which is directly underneath the p-type diffusion layer 10 so as to protrude from the bottom of the LDD layer 5a, toward a deeper region down to a depth D2. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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