GROWTH METHOD USING NANOSTRUCTURE COMPLIANT LAYER AND HVPE (HYDRIDE VAPOR PHASE EPITAXY) FOR PRODUCING HIGH QUALITY COMPOUND SEMICONDUCTOR MATERIAL

摘要

PROBLEM TO BE SOLVED: To provide a method for growing high-quality flat and thick compound semiconductors. SOLUTION: The method utilizes HVPE to grow high-quality flat and thick compound semiconductors (15) onto foreign substrates (10) using nanostructure layers. Nanostructures (12) of semiconductor materials can be grown on foreign substrates (10) by molecular beam epitaxy (MBE), chemical vapor deposition (CVD), metalorganic chemical vapor deposition (MOCVD) or hydride vapor phase epitaxy (HVPE). Further, growth of compound semiconductor thick films (15) or wafer on the nanostructures (12) is achieved by epitaxial lateral growth using HVPE. COPYRIGHT: (C)2010,JPO&INPIT