METHOD FOR MANUFACTURING SOI SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To improve bonding strength and reliability of an SOI substrate in bonding a semiconductor substrate and a base substrate to each other even when an insulating film containing nitrogen is used as a bonding layer. SOLUTION: An oxide film is provided on a semiconductor substrate side, a nitrogen-containing layer is provided on a base substrate side, and the oxide film formed on the semiconductor substrate and the nitrogen-containing layer formed on the base substrate are bonded to each other. Further, plasma treatment is performed to at least one of the oxide film and the nitrogen-containing layer before bonding the oxide film formed on the semiconductor substrate and the nitrogen-containing layer formed on the base substrate to each other. The plasma treatment can be performed with a bias voltage applied. COPYRIGHT: (C)2010,JPO&INPIT