发明名称 ELECTRODE REMOVING STRUCTURE FOR SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To take out electric signals from an air-tight space, without damaging the airtightness thereof. Ž<P>SOLUTION: An electrode removing structure for a pressure sensor 1 comprises: heavily-doped diffusion domains 6 and 8 extending from a jointing surface of a silicon substrate 2 with a silicon substrate 3 toward a surface exposed in the airtight space 4; havily-doped diffusion regions 5 and 7 that extend from a jointing surface of the silicon substrate 2 with the silicon substrate 3, toward a surface exposed in the airtight space 4; a through-hole 9a, formed from the outer surface side of the silicon substrate 2 to a depth that reaches the diffusion domains 7; a through-hole 9b formed from the outer surface side of the silicon substrate 2, to a depth that reaches the diffusion regions 8; and thin metal films 10a and 10b, formed on the side faces and at the bottom parts of the through-holes 9a and 9b, respectively. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
申请公布号 JP2010032220(A) 申请公布日期 2010.02.12
申请号 JP20080191447 申请日期 2008.07.24
申请人 PANASONIC ELECTRIC WORKS CO LTD 发明人 MESHII RYOSUKE;SAKAI KOJI;YOSHIYASU TOSHIAKI;FUKUDA SUMIHISA;NOMURA MASATOSHI
分类号 G01L9/00;G01P15/08;H01L29/84 主分类号 G01L9/00
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