| 摘要 |
Methods, constructions, and devices that include tantalum oxide layers (50) adjacent to niobium nitride (30) are disclosed herein. In certain embodiments, the niobium nitride is crystalline and has a hexagonal close-packed structure. Optionally, the niobium nitride can have a surface (35) that includes niobium oxide (40) adjacent to at least a portion thereof. In certain embodiments, the tantalum oxide layer is crystallographically textured and has a hexagonal structure. |
