发明名称 APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR SINGLE CRYSTAL INGOT USING CUSP MAGNETIC FIELD
摘要 PURPOSE: An apparatus and a method for manufacturing a semiconductor single crystal an ingot using cusp magnetic field are provided to improve the productively of single crystal by securing a process margin. CONSTITUTION: A semiconductor single crystal ingot manufacturing device comprises magnetic field supply unites(80a, 80b). The magnetic field supply unites are arranged near a crucible(10). The magnetic field supply unites have the center of ZGP(Zero Gauss Plane) of -30mm ~ 60mm in relation to the high level interface. In this case, the central location of ZGP has the vertical component of the magnetic field of 0. The magnetic field supply unites applies a CUSP magnetic field having a R over 1.
申请公布号 KR20100015251(A) 申请公布日期 2010.02.12
申请号 KR20080076207 申请日期 2008.08.04
申请人 SILTRON INC. 发明人 JUNG YO HAN;SIM, BOK CHEOL;KIM, DO YEON;LEE, HONG WOO
分类号 C30B15/00;H01L21/20 主分类号 C30B15/00
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