| 摘要 |
PURPOSE: A dual magneto-resistance memory cell is provided to obtain the high integration and the high capacitance of a magneto-resistance memory cell structure by realizing multi-bit using a plurality of pinned magnetic layers formed on a plurality of non-magnetic layers. CONSTITUTION: A common free magnetic layer(104) is magnetization-reversed by magnetic field or current. A first and a second non-magnetic layers(103,105) are respectively formed on the upper side and the lower side of the common free magnetic layer. A first and a second magnetic pinned layer(102,106) are respectively formed on the first and the second non-magnetic layers. The first and the second magnetic pinned layer are formed to oppose the common free magnetic layer. The second magnetic pinned layer is not magnetization-reversed by the magnetic field or the current which magnetization-reverses the common free magnetic layer. The second magnetic pinned layer is magnetization-reversed by magnetic field or current which does not magnetization-reverse the first pinned magnetic layer.
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