| 摘要 |
<P>PROBLEM TO BE SOLVED: To increase the margin of superposing misalignment of lithography, and to restrain decrease of a contact area between a first storage electrode and a second storage electrode. <P>SOLUTION: The semiconductor device 31 includes: pillar-shaped first storage electrodes 13; crown-shaped second storage electrodes 20; landing pads 16 for electrodes each arranged between the upper face of the first storage electrode 13 and the bottom face of the second storage electrode 20, wherein the landing pads connects the first storage electrode 13 to the second storage electrode 20, each has a mounting surface 16a for the second storage electrode 20 larger than the bottom face of the second storage electrode 20, and mounts the second storage electrode 20 on the mounting surface 16a; a capacitive insulating film; and a plate electrode 21 covering the capacitive insulating film. <P>COPYRIGHT: (C)2010,JPO&INPIT |
