METHOD OF DESIGNING MASK PATTERN SET, MASK PATTERN SET, AND METHOD OF MANUFACTURING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a technique capable of forming a feature of a critical dimension smaller than a limit of a single exposure step.

SOLUTION: A multiple-exposure lithographic process in which a developed resist pattern derived from a first exposure is present within a second resist layer that is exposed in a second exposure of the multiple-exposure lithographic process. A second mask pattern used in a second exposure process includes at least one localized adjustment to at least one feature thereof to compensate for scattering effects of the developed resist pattern that is present when the second exposure is performed.

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