REFLECTIVE MASK AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a reflective mask capable of accurately controlling a dimension of a pattern formed on a wafer, and to provide a manufacturing method for a semiconductor device.

SOLUTION: The mask for reducing and transferring the shape of a mask pattern onto the wafer by reflecting irradiated EUV light at a position corresponding to the shape of the mask pattern includes: a reflective film 5 that is arranged on the upper surface on a side on which EUV light is irradiated and reflects the EUV light; a buffer layer 3 that is arranged on the upper surface on a side of the reflective film 5 and covers the entire surface of the reflective film 5; and a non-reflective layer that is arranged on the upper surface on a side of the buffer layer 3 and in which the mask pattern is formed by an absorber 2 that absorbs the irradiated EUV light.

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