| 摘要 |
PROBLEM TO BE SOLVED: To provide an epitaxial wafer which, when grown by a CZ (Czochralski) method, is free from EP (Epitaxial) defects and includes properties such as excellent gettering ability on the surface of the wafer. SOLUTION: The method for producing the silicon epitaxial wafer forms an epitaxial layer on the surface of a silicon wafer cut out of a silicon single crystal ingot, wherein the silicon single crystal ingot is grown at a cooling rate of≥1.0°C/min in the temperature range of 1,030-920°C and subsequently grown at a cooling rate of≥0.5 and≤1.0°C/min in the temperature range of 920-720°C on the way of pulling when a silicon single crystal ingot having an OSF nucleus latent area and an adjusted oxygen concentration of 12×10<SP>17</SP>-15×10<SP>17</SP>atoms/cm<SP>3</SP>(ASTM F121-1979) is pulled by a CZ method. The silicon epitaxial wafer obtained by the method is also provided. COPYRIGHT: (C)2010,JPO&INPIT
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