INSPECTION METHOD OF SEMICONDUCTOR SUBSTRATE, INSPECTING APPARATUS OF SEMICONDUCTOR SUBSTRATE, AND SCREENING SYSTEM OF SEMICONDUCTOR SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide an inspection method of a semiconductor substrate that inspects whether or not the quality of a semiconductor substrate is good enough to favorably form silicide. SOLUTION: The inspection method has an irradiation step of irradiating light to a semiconductor substrate in which silicide is formed on its surface to form an electrode, a measuring step of measuring the light intensity of reflected light by irradiation, and a determination step of comparing a measured value with a threshold held beforehand to determine the quality of the semiconductor substrate. These steps can inspect the quality of a semiconductor substrate prior to silicide formation for electrode formation. COPYRIGHT: (C)2010,JPO&INPIT