POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN

摘要

PURPOSE: A method for forming resist pattern is provided to form a resist pattern with high resolution and good shape with little influence on the first resist pattern in a double patterning process. CONSTITUTION: A positive resist composition comprises: a base component(A) which exhibits increased solubility in an alkali developing solution under the action of acid; and an acid-generator component(B) which generates acid upon exposure; and an organic solvent(S), wherein the organic solvent(S) comprises an alcohol-based organic solvent having a boiling point of at least 150deg.C. A method for forming a positive resist pattern comprises: applying a positive resist composition to a substrate to form a first resist film on the substrate; subjecting the first resist film to selective exposure and alkali developing to form a first resist pattern; applying a positive resist composition on the substrate on which the first resist pattern is formed to form a second resist film; and subjecting the second resist film to selective exposure and alkali developing to form a resist pattern.