发明名称 METHOD FOR MANUFACTURING THIN-FILM PIEZOELECTRIC ELEMENT
摘要 <P>PROBLEM TO BE SOLVED: To provide a piezoelectric element in which changes in displacement amount are reduced in an actual-use voltage during the entire use period. <P>SOLUTION: A method for manufacturing a thin-film piezoelectric element includes a process for forming a piezoelectric element by forming an electrode layer on each of both faces of a dielectric layer, and an aging process for stabilizing displacement characteristics with respect to a drive voltage by applying an aging voltage to the piezoelectric element. The method is configured to repeat a state in which a waveform of the aging voltage rises from a voltage equivalent to a coercive field Ec of the dielectric layer to a high voltage exceeding the drive voltage and falls to the voltage equivalent to the coercive field Ec from the high voltage. The state is repeated in order to accelerate polarization changes in domain by changing the field intensity inside the dielectric in a wide range, thereby stabilizing a polarization axis. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010034154(A) 申请公布日期 2010.02.12
申请号 JP20080192575 申请日期 2008.07.25
申请人 SEIKO EPSON CORP 发明人 YOKOYAMA NAOTO;NOGUCHI MOTOHISA
分类号 H01L41/09;B41J2/14;B41J2/16;H01L41/18;H01L41/22;H01L41/253;H01L41/257 主分类号 H01L41/09
代理机构 代理人
主权项
地址