| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an aqueous dispersion for chemo-mechanical polishing having high polishing speed and high polishing selectivity to a copper film, and a small amount of metal contamination of a wafer, and to provide a chemo-mechanical polishing method using the aqueous dispersion for chemo-mechanical polishing. <P>SOLUTION: The aqueous dispersion for chemo-mechanical polishing is used for polishing the copper film containing a silica particle (A), an organic acid (B), and an anionic surfactant (C). The silica particle (A) should have the following chemical properties. Contents of sodium, potassium, and an ammonium ion, which are measured by an elementary analysis by ICP emission spectrometry or ICP mass spectrometry and the quantitative analysis of the ammonium ion by ion chromatography, are as follows: the sodium content is 5-500 ppm; and the content of at least one selected from the potassium and ammonium ion is 100-20,000 ppm. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
