| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To improve the throughput of formation of a semiconductor element by heat processing of a semiconductor film using energy beams. <P>SOLUTION: A semiconductor processing apparatus includes a stage 20 on which a substrate 10 having the semiconductor film 11 to be processed is mounted, a supply section 30 which supplies a plurality of energy beams B onto the semiconductor film 11 of the substrate 10 mounted on the stage such that irradiation points of the plurality of energy beams are arrayed at constant intervals, and a control section 40 which controls the heat processing on the semiconductor film 11 by scanning the semiconductor film 11 with the irradiation points of the plurality of energy beams B by relatively moving the plurality of energy beams B and substrate 10 in a direction not parallel to the array of the irradiation points of the plurality of energy beams B supplied from the supply section 30. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
