发明名称 SUBSTRATE PROCESSING APPARATUS, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To improve the uniformity of substrate processing intra substrate surface and inter substrates. <P>SOLUTION: The substrate processing apparatus includes a substrate holder for holding a plurality of substrates in a stack in a horizontal posture, an inner tube for housing the substrate holder, an outer tube enclosing the inner tube, a gas nozzle disposed in the inner tube, a gas port bored in the gas nozzle, a material gas supply unit for supplying a material gas into the inner tube through the gas nozzle, a gas exhaust port bored in a sidewall of the inner tube, an exhaust unit which exhausts the space enclosed with the outer tube and inner tube to generate a gas flow from the gas port to the gas exhaust port in the inner tube, and a gas entry suppressing cylinder which encloses an outer periphery of an area below the area of the substrate holer where the substrates are stacked. <P>COPYRIGHT: (C)2010,JPO&INPIT</p>
申请公布号 JP2010034406(A) 申请公布日期 2010.02.12
申请号 JP20080196562 申请日期 2008.07.30
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 YAMAZAKI HIROHISA;OKADA ITARU;KATO TSUTOMU
分类号 H01L21/31;C23C16/455 主分类号 H01L21/31
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