EDGE-EMITTING SEMICONDUCTOR LASER AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide an edge-emitting semiconductor laser and its manufacturing method, of which RIN characteristics are reduced. SOLUTION: An edge-emitting semiconductor laser is provided with a periodic structure layer 13 between an active layer 16 and an n-side electrode 32. The periodic structure layer 13 has a periodic structure of an AlInN layer and a GaN layer, and the thickness of one layer is λ/4n (λ is wavelength and n is refractive index). The spontaneous emission from the active layer 16 to a substrate 11 side is reflected by the periodic structure layer 13 to return to the active layer 16, resulting in a decrease in RIN characteristic. By modulating a superlattice structure of a p-type superlattice clad layer, such function as a reflective layer similar to the periodic structure layer 13 is provided. The periodic structure layer 13 may be a periodic structure of the AlGaN layer and the GaN layer so that the relationship of t≤0.000422*X-2.821is met, where X is an average aluminum composition ratio of the periodic structure layer 13 and t is a total thickness. COPYRIGHT: (C)2010,JPO&INPIT