| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a laser annealing device that can be quickly perform preprocessing stages from surface oxide film removal to surface oxide film formation and capable of forming a homogeneous polycrystalline silicon film. Ž<P>SOLUTION: The laser annealing device crystallizes an amorphous silicon thin film by a solid laser annealing method. The laser annealing device includes, as preprocessing device, a surface oxide film removing device 1 which removes a surface oxide film of the amorphous silicon thin film and a surface oxide film forming device 2 which forms an oxide film of predetermined thickness on a surface of the amorphous silicon thin film. The surface oxide film removing device 1 and surface oxide film forming device 2 are disposed in a state wherein continuous processing is performed. For example, the surface oxide film removing device 1 and surface oxide film forming device 2 are arranged at a periphery of the same conveying robot 4. Alternatively, the surface oxide film removing device 1 and surface oxide film forming device 2 are coupled together. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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