发明名称 |
SOI SUBSTRATE MANUFACTURING METHOD AND SOI SUBSTRATE |
摘要 |
<p>Provided is an SOI substrate manufacturing method which includes a step of preparing a bond wafer and a base wafer which are composed of single crystal silicon wafers; a step of forming an oxide film at least on a surface of either the bond wafer or the base wafer; a step of bonding the bond wafer and the base wafer through the oxide film; a step of performing low-temperature heat treatment to the bonded substrate at 400°C or higher but not higher than 1,000°C; a step of thinning the bond wafer into an SOI layer; and a step of improving bonding strength by performing high-temperature heat treatment at a temperature higher than 1,000°C. In the case of manufacturing a thick SOI substrate provided with an embedded oxide film having a thickness of 3μm or more by bonding method, the SOI substrate having the high-quality SOI layer is provided by suppressing generation of slip dislocation.</p> |
申请公布号 |
KR20100015877(A) |
申请公布日期 |
2010.02.12 |
申请号 |
KR20097022260 |
申请日期 |
2008.04.15 |
申请人 |
SHIN-ETSU HANDOTAI CO., LTD. |
发明人 |
MATSUMINE MASAO |
分类号 |
H01L27/12;H01L21/20;H01L21/324 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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