发明名称 PLASMA CVD APPARATUS
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a solar cell isoelectric device having a good yield in its performance, which prevents adhesion of particles, such as fine particles flocculated in a discharge space and splinter-like particles derived from a film which is formed on the internal surface of a vacuum chamber or a discharge electrode and then exfoliates, to a film-deposited substrate. <P>SOLUTION: In a film formation chamber, by rectifying the flow of an introduced gas in the direction for distancing from the film formation surface of a film-deposited substrate, fine particles germinating in a discharge space and splinter-like particles derived from a film formed on and separated from the internal surface of the vacuum chamber or a discharge electrode are placed on a gas current and discharged, thereby preventing the adhesion to the film formation surface of the film-deposited substrate. In addition, the fine particles and the splinter-like particles are aspirated and discharged from plural openings set up on the total discharging electrode surface, and the amount of a film accumulating on the discharge electrode and the amount of a separated and discharged film are in commensurate static states, thereby enabling the continuous film formation without performing cleaning of the discharge electrode for a long time. <P>COPYRIGHT: (C)2010,JPO&INPIT</p>
申请公布号 JP2010031381(A) 申请公布日期 2010.02.12
申请号 JP20090252626 申请日期 2009.11.04
申请人 SEMICONDUCTOR ENERGY LAB CO LTD;TDK CORP 发明人 YONEZAWA MASAHITO;KUSUMOTO NAOTO;SHINOHARA HISATO
分类号 C23C16/44;H01L21/205;H01L31/04 主分类号 C23C16/44
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