| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide technique for efficiently forming texture capable of making power generation area on a silicon surface large. <P>SOLUTION: The present invention includes a natural oxide film removing step (P2) of removing a natural oxide film on a surface of a silicon substrate by a dry etching method; a step (P4) of removing a damaged layer, damaged during slicing, on the surface of the silicon substrate; a texture forming step (P6) of forming the texture on the surface of the silicon substrate by the dry etching method; a damaged layer removing step (P8) of removing a layer, damaged when the texture is formed, on the surface of the silicon substrate by the dry etching method; and a texture rounding step (P9) of rounding the shape of the texture on the silicon substrate by a wet etching method. The natural oxide film removing step (P2), slicing damaged layer removing step (P4), texture forming step (P6), and damaged layer removing step (P8) are carried out in the same vacuum processing tank 2. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
