| 摘要 |
PROBLEM TO BE SOLVED: To provide a technology which can form a plurality of elements forming a high frequency device into a chip. SOLUTION: Lower electrodes of a resistive element and a capacitive element are formed of the same polycrystalline silicon film on a substrate 1. A gate electrode of a power MISFET, an upper electrode of the capacitive element, a gate electrode of an n-channel MISFET, and a gate electrode of a p-channel MISFET are formed of the same polycrystalline silicon film but different from the polycrystalline silicon film and a WSi film. A capacitive element MIMC with a lower electrode being a wiring formed on a silicon oxide film 30 deposited on a substrate 1 and with an upper electrode being a wiring formed on a silicon oxide film 34 is formed in an area MIM. The same aluminum alloy film deposited on a silicon oxide film 37 deposited on the silicon oxide film 34 is used to form a spiral coil formed of a wiring 39A in an area IND and to form a bonding pad formed of a wiring 39B in an area PAD. COPYRIGHT: (C)2010,JPO&INPIT |
