| 摘要 |
Nanowire-based opto-electronic devices (100, 200, 300, 400, 500) including nanowire layers, photodetectors and semiconductor optical amplifiers are disclosed. The devices include nanowires (114, 214, 324, 434, 436, 560, 562) grown from single crystal and/or non-single surfaces. The semiconductor optical amplifiers include nanowire arrays that act as ballast lasers to amplify a signal carried by a signal waveguide. Embodiments of the nanowire lasers and photodetectors include horizontal and vertical nanowires (434, 436, 562, 560) that can provide different ploarizations. |
