GATED LATERAL THYRISTOR MEMORY CELLS AND INTEGRATED CIRCUITS INCORPORATING THE SAME

摘要

A memory cell (410) is provided which includes an access transistor (470) and a gated lateral thyristor (GLT) device (460). The access transistor (470) includes a source node (474). The gated lateral thyristor (GLT) device (460) includes an anode node (462) coupled to the source node (474) of the access transistor (470).