| 摘要 |
<p>[PROBLEMS]To provide a resist lower layer film composition for electron lithography, which is to be used in a device manufacturing process using electron lithography, reduces adverse effects due to electron beams and is effective for obtaining an excellent resist pattern, and to provide a resist pattern forming method wherein such composition is used.[MEANS FOR SOLVING PROBLEMS]The resist lower layer film forming composition for electron lithography contains a polymeric compound, which has a repeated unit structure containing halogen atoms, and a solvent. The composition is used for manufacturing semiconductor devices, by being formedbetween a process target film, which forms a transfer pattern on a substrate, and an electron lithography resist film. The polymeric compound contains at least halogen atoms of 10 mass %.</p> |
