| 发明名称 |
Field-effect transistor |
| 摘要 |
Disclosed is a field-effect transistor characterized by using a compound represented by the formula (1) below as a semiconductor material. (In the formula (1), X1 and X2 independently represent a sulfur atom, a selenium atom or a tellurium atom; and R1 and R2 independently represent an unsubstituted or halogeno-substituted C1-C36 aliphatic hydrocarbon group.)
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| 申请公布号 |
US2010032655(A1) |
申请公布日期 |
2010.02.11 |
| 申请号 |
US20070311771 |
申请日期 |
2007.10.19 |
| 申请人 |
TAKIMIYA KAZUO;EBATA HIDEAKI;KUWABARA HIROKAZU;IKEDA MASAAKI;YUI TATSUTO |
发明人 |
TAKIMIYA KAZUO;EBATA HIDEAKI;KUWABARA HIROKAZU;IKEDA MASAAKI;YUI TATSUTO |
| 分类号 |
H01L51/10;C07D345/00;C07D495/04;H01L51/40 |
主分类号 |
H01L51/10 |
| 代理机构 |
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