| 发明名称 |
Production of VDMOS-Transistors Having Optimized Gate Contact |
| 摘要 |
The invention relates to a method for producing VDMOS transistors in which a specific layer arrangement and a specific method sequence allow setting up an improved gate contact when simultaneously producing source and gate contacts using a single contact hole mask (photo mask).
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| 申请公布号 |
US2010035366(A1) |
申请公布日期 |
2010.02.11 |
| 申请号 |
US20060911624 |
申请日期 |
2006.04.10 |
| 申请人 |
X-FAB SEMICONDUCTOR FOUNDRIES AG |
发明人 |
DOEHNEL JOCHEN;HERING SIEGFRIED |
| 分类号 |
H01L21/66;H01L21/336 |
主分类号 |
H01L21/66 |
| 代理机构 |
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| 主权项 |
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| 地址 |
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