发明名称 |
ARSENIC DOPED SEMICONDUCTOR LIGHT EMITTING DEVICE AND ITS MANUFACTURE |
摘要 |
A semiconductor light emitting device includes: a substrate; a first clad layer formed above the substrate and made of AlGaInP mixed crystal of a first conductivity type; an active layer formed on the first clad layer and made of AlGaInP mixed crystal; and a second clad layer formed on the active layer and made of AlGaInP mixed crystal of a second conductivity type opposite to the first conductivity type, wherein the first clad layer and the second clad layer each have a band gap wider than a band gap of the active layer, and at least one of the active layer and the first and second clad layers is doped with arsenic at an impurity concentration level not changing the band gap. Carbon capturing is suppressed, and surface morphology is suppressed from being degraded.
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申请公布号 |
US2010034230(A1) |
申请公布日期 |
2010.02.11 |
申请号 |
US20090535985 |
申请日期 |
2009.08.05 |
申请人 |
STANLEY ELECTRIC CO., LTD. |
发明人 |
TAMURA WATARU;SAITO TATSUMA |
分类号 |
H01S5/026;H01L21/00 |
主分类号 |
H01S5/026 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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