发明名称 |
DESIGN STRUCTURE FOR SEMICONDUCTOR DEVICE HAVING RADIATION HARDENED INSULATORS AND STRUCTURE THEREOF |
摘要 |
A design structure is provided for a semiconductor device having radiation hardened buried insulators and isolation insulators in SOI technology. The device includes a first structure and a second structure. The first structure includes: a radiation hardened BOX layer under an active device layer; radiation hardened shallow trench isolation (STI) structures between active regions of the active device layer and above the radiation hardened BOX layer; metal interconnects in one or more interlevel dielectric layers above gates structures of the active regions. The second structure is bonded to the first structure. The second structure includes: a Si based substrate; a BOX layer on the substrate; a Si layer with active regions on the BOX; oxide filled STI structures between the active regions of the Si layer; and metal interconnects in one or more interlevel dielectric layers above gates structures. At least one metal interconnect is electrically connecting the first structure to the second structure. |
申请公布号 |
US2010032795(A1) |
申请公布日期 |
2010.02.11 |
申请号 |
US20080186762 |
申请日期 |
2008.08.06 |
申请人 |
|
发明人 |
AITKEN JOHN M.;CANNON ETHAN H. |
分类号 |
H01L23/58;G06F17/50 |
主分类号 |
H01L23/58 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|