| 摘要 |
A cleaning composition for semiconductor device is used to, after the procedure including sequentially superimposing an organosiloxane thin film and a photoresist layer on a substrate provided with an interlayer insulating film of low dielectric constant and a copper wiring or copper alloy wiring, carrying out selective exposure/development treatment of the photoresist layer to thereby form a photoresist pattern, masking the resist pattern and performing dry etching of the organosiloxane thin film and interlayer insulating film of low dielectric constant, to remove the organosiloxane thin film, residue generated by the dry etching, degenerated photoresist resulting from the dry etching and undegenerated photoresist layer lying under the degenerated photoresist. The cleaning composition contains 15 to 20 mass% of hydrogen peroxide, 0.0001 to 0.003 mass% of aminopolymethylenephosphonic acids, 0.02 to 0.5 mass% of potassium hydroxide and water and has a pH value of 7.5 to 8.5. Further, there is provided a process for producing a semiconductor device with the use of the cleaning composition. |
