发明名称 |
Method of Manufacturing a Resistivity Changing Memory Cell, Resistivity Changing Memory Cell, Integrated Circuit, and Memory Module |
摘要 |
According to an embodiment, a method of manufacturing an integrated circuit including a plurality of resistivity changing memory cells is provided. The method includes: forming a stack of layers including a resistivity changing layer, a first conductive layer, a second conductive layer, and a patterned masking layer which are stacked above each other in this order; patterning the second conductive layer using the masking layer as a patterning mask; patterning the first conductive layer using the second conductive layer as a patterning mask; and patterning the resistivity changing layer using the first conductive layer as a patterning mask.
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申请公布号 |
US2010032642(A1) |
申请公布日期 |
2010.02.11 |
申请号 |
US20080187258 |
申请日期 |
2008.08.06 |
申请人 |
PARK CHANRO;LEUSCHNER RAINER |
发明人 |
PARK CHANRO;LEUSCHNER RAINER |
分类号 |
H01L21/283;H01L45/00 |
主分类号 |
H01L21/283 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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