发明名称 |
PLASMA TREATMENT OF A SEMICONDUCTOR SURFACE FOR ENHANCED NUCLEATION OF A METAL-CONTAINING LAYER |
摘要 |
A method for forming a dielectric layer is provided. The method may include providing a semiconductor surface and etching a thin layer of the semiconductor substrate to expose a surface of the semiconductor surface, wherein the exposed surface is hydrophobic. The method may further include treating the exposed surface of the semiconductor substrate with plasma to neutralize a hydrophobicity associated with the exposed surface, wherein the exposed surface is treated using plasma with a power in a range of 100 watts to 500 watts and for duration in a range of 1 to 60 seconds. The method may further include forming a metal-containing layer on a top surface of the plasma treated surface using an atomic layer deposition process.
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申请公布号 |
US2010035434(A1) |
申请公布日期 |
2010.02.11 |
申请号 |
US20090579072 |
申请日期 |
2009.10.14 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
TRIYOSO DINA H.;ADETUTU OLUBUNMI O. |
分类号 |
H01L21/31;H01L21/306 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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