发明名称 Semiconductor device and protection circuit
摘要 In a protection circuit of an input/output terminal I/O, three types of PNP bipolar transistors are included. In a first PNP type bipolar transistor 10A, the emitter thereof is connected to the input/output terminal I/O, the base thereof is connected to a high-potential power supply terminal VDD, and the collector thereof is connected to a low-potential power supply terminal VSS. In a second PNP type bipolar transistor 10B, the emitter thereof is connected to the input/output terminal I/O, and the base and the collector thereof are connected to the high-potential power supply terminal VDD. In a third PNP type bipolar transistor 10C, the emitter thereof is connected to the low-potential power supply terminal VSS, and the base and the collector thereof are connected to the high-potential power supply terminal VDD.
申请公布号 US2010032714(A1) 申请公布日期 2010.02.11
申请号 US20090588485 申请日期 2009.10.16
申请人 NEC ELECTRONICS CORPORATION 发明人 TAKAHASHI YUKIO
分类号 H01L23/60 主分类号 H01L23/60
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