| 摘要 |
A semiconductor device includes: a semiconductor substrate having an active area formed on a major surface of the semiconductor substrate; an interlayer insulating film and a wiring layer formed on predetermined regions of the active area; and a sealing resin film covering the interlayer insulating film, the wiring layer, and the major surface of the semiconductor substrate and filling a groove surrounding the active area. The sealing resin film 9 and a junction made of the sealing resin film filled in the groove are formed to be continuous with each other. Thus, the occurrence of a separation of the sealing resin and the inward propagation thereof are prevented.
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