| 摘要 |
A semiconductor device includes: a high withstanding voltage transistor (128); a gate electrode (110) formed on a channel region (170); a first conductivity type source region (116a) formed on one side of the channel region (170) and a first conductivity type drain region (116b) formed on another side of the channel region (116a); and a drift region (172) which is provided between the source region (116a) and the drain region (116b) and has a super junction structure in which first conductivity type impurity diffusion regions and second conductivity type impurity diffusion regions are alternately arranged at regular intervals of a constant width in a gate width direction of the gate electrode (110). The gate electrode has a comb-shaped structure in plan view, the comb-shaped structure including comb teeth which cover the second conductivity type impurity diffusion regions of the drift region (172).
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