GENERATING A PUMPING FORCE IN A SILICON MELT BY APPLYING A TIME-VARYING MAGNETIC FIELD
摘要
<p>Controlling crystal growth in a crystal growing system is described. The crystal growing system includes a heated crucible including a semiconductor melt from which a monocrystalline ingot is grown according to a Czochralski and the ingot is grown on a seed crystal pulled from the melt. The method includes applying a cusped magnetic field to the melt by supplying an upper coil with a first direct current (IUDC) and supplying a lower coil with a second direct current (ILDC). The method also includes supplying the upper coil with a first alternating current (IUAC) and supplying the lower coil with a second alternating current (ILAC) to generate a time-varying magnetic field, wherein the time-varying magnetic field generates a pumping force in the semiconductor melt.</p>
申请公布号
WO2010017389(A1)
申请公布日期
2010.02.11
申请号
WO2009US53002
申请日期
2009.08.06
申请人
MEMC ELECTRONIC MATERIALS, INC.;SREEDHARAMURTHY, HARIPRASAD;KULKARNI, MILIND, S.;KORB, HAROLD, W.
发明人
SREEDHARAMURTHY, HARIPRASAD;KULKARNI, MILIND, S.;KORB, HAROLD, W.