发明名称 |
METHOD OF SYNTHESIZING ITO ELECTRON-BEAM RESIST AND METHOD OF FORMING ITO PATTERN USING THE SAME |
摘要 |
Provided is a method of synthesizing an ITO electron beam resist and a method of forming an ITO pattern. The ITO electron beam resist is synthesized by dissolving indium chloride tetrahydrate and tin chloride dihydrate in 2-ethoxy ethanol. The method of forming an ITO pattern includes: forming an ITO electron beam resist film on a substrate, forming an ITO electron beam resist pattern by patterning the ITO electron beam resist film, and forming an ITO pattern by annealing the ITO electron beam resist pattern.
|
申请公布号 |
US2010035179(A1) |
申请公布日期 |
2010.02.11 |
申请号 |
US20080532149 |
申请日期 |
2008.03.19 |
申请人 |
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTIT UTE |
发明人 |
KIM KI-CHUL;MAENG SUNG-LYUL;SHIN SUNG-JIN;KANG DAE-JOON |
分类号 |
G03F7/20;G03F7/004 |
主分类号 |
G03F7/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|