发明名称 Field-Effect Device and Manufacturing Method Thereof
摘要 Embodiments relate to a field-effect transistor that includes a body region, a first source/drain region of a first conductivity type, a second source/drain region of the first conductivity type, and a pocket implant region adjacent to the first source/drain region, the pocket implant region being of a second conductivity type, wherein the second conductivity type is different from the first conductivity type. The body region physically contacts the pocket implant region.
申请公布号 US2010032749(A1) 申请公布日期 2010.02.11
申请号 US20080188774 申请日期 2008.08.08
申请人 SHRIVASTAVA MAYANK;GOSSNER HARALD;RAO RAMGOPAL;BAGHINI MARYAM SHOJAEI 发明人 SHRIVASTAVA MAYANK;GOSSNER HARALD;RAO RAMGOPAL;BAGHINI MARYAM SHOJAEI
分类号 H01L29/78;H01L21/336 主分类号 H01L29/78
代理机构 代理人
主权项
地址