发明名称 RELAXATION AND TRANSFER OF STRAINED LAYERS
摘要 The present invention relates a method for the formation of at least partially relaxed strained material on a target substrate, comprising the subsequently performed steps of forming islands from a strained material layer on an intermediate substrate, at least partially relaxing the strained material islands by a first heat treatment and transferring the at least partially relaxed strained material islands to the target substrate.
申请公布号 WO2010015302(A2) 申请公布日期 2010.02.11
申请号 WO2009EP04792 申请日期 2009.07.02
申请人 S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES;LETERTRE, FABRICE;FAURE, BRUCE;GUENARD, PASCAL;KRAMES, MIKE;MCLAURIN, NELSON;GARDNER, NATE 发明人 LETERTRE, FABRICE;FAURE, BRUCE;GUENARD, PASCAL;KRAMES, MIKE;MCLAURIN, NELSON;GARDNER, NATE
分类号 H01L21/20;H01L21/58;H01L21/762;H01L31/18;H01L33/00 主分类号 H01L21/20
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