发明名称 RECEIVER OF SEMICONDUCTOR MEMORY APPARATUS
摘要 A receiver of a semiconductor memory apparatus includes a first input transistor configured to be turned ON when an input signal is equal to or more than a predetermined level; a second input transistor configured to be turned ON when the input signal is equal to or less than the predetermined level; a first output node voltage control unit configured to increase a voltage level of an output node when the first input transistor is turned ON; a second output node voltage control unit configured to decrease the voltage level of the output node when the second input transistor is turned ON; a third input transistor configured to increase the voltage level of the output node when an inversion signal of the input signal is equal to or less than the predetermined voltage level; and a fourth input transistor configured to decrease the voltage level of the output node when the inversion signal of the input signal is equal to or more than the predetermined voltage level.
申请公布号 US2010034033(A1) 申请公布日期 2010.02.11
申请号 US20090483413 申请日期 2009.06.12
申请人 HYNIX SEMICONDUCTOR INC. 发明人 HWANG TAE JIN;KIM YONG JU;HAN SUNG WOO;SONG HEE WOONG;OH IC SU;KIM HYUNG SOO;CHOI HAE RANG;LEE JI WANG;JANG JAE MIN;PARK CHANG KUN
分类号 G11C7/00 主分类号 G11C7/00
代理机构 代理人
主权项
地址